Field-enhanced-generated leakage current of metal-induced laterally crystallized hydrogenated n-type poly-Si TFTs under hot-carrier stress
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Value-added integration of functions for silicon-on-glass (SOG) based on LTPS technologies
2. Anomalous variations of OFF-State leakage current in poly-Si TFT under static stress
3. Leakage current reduction due to hot carrier effects in n-channel polycrystalline silicon thin film transistors
4. Analysis and Classification of Degradation Phenomena in Polycrystalline-Silicon Thin Film Transistors Fabricated by a Low-Temperature Process Using Emission Light Microscopy
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characteristics of Fully-Depleted Poly-Si Thin Film Transistors Operated in Above-Threshold Region with Low Drain Bias;IETE Journal of Research;2024-06-10
2. A channel-potential-based surface potential model and a turn-on DC channel-potential-based drain current model for fully-depleted poly-Si thin film transistors including tail and deep acceptor-like trap states in bulk;Modern Physics Letters B;2019-12-06
3. Thermally generated leakage current mechanisms of metal-induced laterally crystallized n-type poly-Si TFTs under hot-carrier stress;Solid-State Electronics;2011-08
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