Characteristics of Fully-Depleted Poly-Si Thin Film Transistors Operated in Above-Threshold Region with Low Drain Bias-Reference-Cited by-同舟云学术

Characteristics of Fully-Depleted Poly-Si Thin Film Transistors Operated in Above-Threshold Region with Low Drain Bias

Published:2024-06-10 Issue: Volume: Page:1-6
ISSN:0377-2063
Container-title:IETE Journal of Research
language:en
Short-container-title:IETE Journal of Research

Author:

Zhu Zhen¹²,Chu Junhao¹

Affiliation:

1. Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, People’s Republic of China

2. School of Electronics and Information Engineering, Suzhou Vocational University, Suzhou 215104, People’s Republic of China

Publisher

Informa UK Limited

Link

https://www.tandfonline.com/doi/pdf/10.1080/03772063.2024.2353345

Reference17 articles.

1. Z. Zhu and J. Chu “A simple surface-potential-based drain current model for fully-depleted poly-Si thin film transistors in strong inversion region with low drain bias ” in Proceedings of the 2nd International Conference on Microelectronic Devices and Technologies Amsterdam 2019 pp. 33–5.

2. Threshold voltage definition based on front surface potential and gate voltage plot for fully-depleted poly-Si thin film transistors;Zhu Z.;Surf. Rev. Lett.

3. A surface-potential-based drain current model suitable for poly-Si thin film transistors with thin body and thin gate oxide

4. A turn-on DC surface-potential-based drain current model for fully-depleted poly-Si thin film transistors;Zhu Z.;TechConnect Briefs,2018

5. A channel-potential-based surface potential model and a turn-on DC channel-potential-based drain current model for fully-depleted poly-Si thin film transistors including tail and deep acceptor-like trap states in bulk