Effect of the diffusion impurity profile on the microwave properties of silicon p+nn+IMPATT diodes
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/9/i=3/a=002/pdf
Reference22 articles.
1. Millimeter-Wave CW IMPATT Diodes and Oscillators
2. Double-drift-region ion-implanted millimeter-wave IMPATT diodes
3. Optimum design for high-power and high-efficiency GaAs Hi-Lo IMPATT diodes
4. IMPATT device simulation and properties
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3. Avalanche Noise Generation Profile along Active Zone of Impatt Diodes;IETE Technical Review;1999-03
4. Optimization of Ion Implanted Low-High-Low Impurity Profile for Silicon n+pp+SDR Diode;IETE Technical Review;1998-01
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