Optimum design for high-power and high-efficiency GaAs Hi-Lo IMPATT diodes-Reference-Cited by-同舟云学术

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Optimum design for high-power and high-efficiency GaAs Hi-Lo IMPATT diodes

Published:1979-03 Issue:3 Volume:26 Page:210-214
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Nishitani K.,Sawano H.,Ishihara O.,Ishii T.,Mitsui S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31787/01479984.pdf?arnumber=1479984

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 15 GHz GaN Hi–Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W;IEEE Transactions on Electron Devices;2024

2. Transit Time Devices;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27

3. Computer studies of quasi Read gallium arsenide IMPATT diode: including the effect of space charge;International Journal of Electronics;1997-04

4. A Superlattice Avalanche Region IMPATT Diode;IETE Journal of Research;1994-09

5. Effect of the diffusion impurity profile on the microwave properties of silicon p+nn+IMPATT diodes;Semiconductor Science and Technology;1994-03-01

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