Thermal annealing of molecular beam epitaxy-grown InGaN/GaN single quantum well-Reference-Cited by-同舟云学术

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Thermal annealing of molecular beam epitaxy-grown InGaN/GaN single quantum well

Published:2012-08-28 Issue:10 Volume:27 Page:105023
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Kaufmann Nils A K,Dussaigne Amélie,Martin Denis,Valvin Pierre,Guillet Thierry,Gil Bernard,Ivaldi Francesco,Kret Slawomir,Grandjean Nicolas

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. 510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN Substrate

2. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

3. InGaN laser diodes with 50 mW output power emitting at 515 nm

4. Pros and cons of green InGaN laser on c-plane GaN

5. True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power onc-Plane GaN

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