Wet etching of GaN grown by molecular beam epitaxy on Si(111)-Reference-Cited by-同舟云学术

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Wet etching of GaN grown by molecular beam epitaxy on Si(111)

Published:2000-09-21 Issue:10 Volume:15 Page:996-1000
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Palacios T,Calle F,Varela M,Ballesteros C,Monroy E,Naranjo F B,Sánchez-García M A,Calleja E,Muñoz E

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Emerging gallium nitride based devices

2. GaN: Processing, defects, and devices

3. High electron mobility AlGaN/GaN heterostructure on (111) Si

4. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy

5. Ultraviolet and violet GaN light emitting diodes on silicon

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