Strain-compensated GaAs1−yPy/GaAs1−zBiz/GaAs1−yPyquantum wells for laser applications-Reference-Cited by-同舟云学术

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Strain-compensated GaAs1−yPy/GaAs1−zBiz/GaAs1−yPyquantum wells for laser applications

Published:2015-07-07 Issue:9 Volume:30 Page:094011
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Kim H,Forghani K,Guan Y,Luo G,Anand A,Morgan D,Kuech T F,Mawst L J,Lingley Z R,Foran B J,Sin Y

Funder

University of Wisconsin Materials Research Science and Engineering Center

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/30/i=9/a=094011/pdf

Reference27 articles.

1. Derivation of 12- and 14-bandk·pHamiltonians for dilute bismide and bismide-nitride semiconductors

2. Band gap of GaAs1−xBix, 0

3. Bismuth alloying in GaAs: a first-principles study

4. The potential role of Bismide alloys in future photonic devices

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1. High verticality vapor–liquid–solid growth of GaAs_0.99Bi_0.01 nanowires using Ga–Bi assisted catalytic droplets;Nanoscale Advances;2024

2. Optical properties of lattice-matched GaAsPBi multiple quantum wells grown on GaAs (001);Semiconductor Science and Technology;2021-03-04

3. Impact of thermal annealing on internal device parameters of GaAs 0.965 Bi 0.035 /GaAs 0.75 P 0.25 quantum well lasers;IET Optoelectronics;2019-02

4. Temperature dependence of band gaps in dilute bismides;Semiconductor Science and Technology;2018-06-26

5. Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing;Journal of Applied Physics;2018-03-21

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