Abstract
Abstract
Quaternary alloy GaAsPBi is a novel III–V compound with attractive optical properties and can in principle be grown lattice-matched to GaAs. However, the practical realization of the alloy by metal-organic vapor phase epitaxy and molecular beam epitaxy (MBE)—the two main growth technologies—is fraught with difficulties. Here, using standard solid-source MBE, GaAsPBi films, and GaAsPBi/GaAs multiple quantum wells (MQW) have been grown lattice-matched to (001) GaAs. The structural integrity of the films/MQW is investigated and confirmed by various in- and ex-situ diffraction and spectroscopic techniques. All GaAsPBi structures—films and MQWs—are luminescent at room temperature. Photoluminescence shows that all the samples exhibit an S-shape temperature dependency, indicating strong localizations. Of most significance to practical applications is the observation that the emission from GaAsPBi MQWs is more efficient than their non-quantum well (QW) counterparts (up to 30× at room temperature). These results confirm the long-known benefits of carrier confinements by QWs, demonstrated here for the first time in the GaAsPBi-based system despite the challenge of the crystal growths.
Funder
National Science and Technology Development Agency
Rachadapisaek Sompote Fund for Postdoctoral Fellowship
Thailand Research Fund
Office of Naval Research Global
Asian Office of Aerospace Research and Development
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献