Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell-Reference-Cited by-同舟云学术

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Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell

Published:2015-06-22 Issue:9 Volume:30 Page:094010
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Thomas T,Mellor A,Hylton N P,Führer M,Alonso-Álvarez D,Braun A,Ekins-Daukes N J,David J P R,Sweeney S J

Funder

Engineering and Physical Sciences Research Council

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/30/i=9/a=094010/pdf

Reference36 articles.

1. Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency

2. 43.5% efficient lattice matched solar cells

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1. Inclusion of metal nanoparticles at the core-shell interface of GaAs_0.99Bi_0.01/ZnO/ITO core-shell nanowire solar cell for photovoltaic performance enhancement;Physica Scripta;2024-05-03

2. A comprehensive simulation study of multi-junction solar cell;Materials Research Express;2024-05-01

3. Effect of biasing under illumination on GaAsBi/GaAs multiple quantum wells for solar cell performance;2023 IEEE Regional Symposium on Micro and Nanoelectronics (RSM);2023-08-28

4. Negative thermal quenching in optically pumped GaAsBi–GaAs heterojunction p–i–n diode;Applied Physics A;2023-08

5. Raman scattering study of photoexcited plasma in GaAsBi/GaAs heterostructures: Influence of carrier confinement on photoluminescence;Materials Science in Semiconductor Processing;2023-08

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