Oxygen-doped Si15Sb85thin film for good data retention and high speed phase-change memory application
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. Revealing the Influence of Oxygen Doping on the Crystallization Kinetics of Sb-GeO2;Crystal Growth & Design;2022-07-21
2. Crystallization characteristic and structure of hafnium addition in germanium antimony thin films for phase change memory;Journal of Alloys and Compounds;2021-05
3. Ultra-Long Retention and Low Power Consumption of Superlattice-Like Ge50Te50/Ge Thin Films for Phase Change Memory Application;ECS Journal of Solid State Science and Technology;2019
4. Crystallization characteristic and scaling behavior of germanium antimony thin films for phase change memory;Nanoscale;2018
5. Simultaneously Good Stability and High Speed Based on Oxygen-Doped Zn15Sb85Material;ECS Journal of Solid State Science and Technology;2018
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