Lower Voltage Operation of a Phase Change Memory Device with a Highly Resistive TiON Layer-Reference-Cited by-同舟云学术

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Lower Voltage Operation of a Phase Change Memory Device with a Highly Resistive TiON Layer

Published:2004-08-10 Issue:8A Volume:43 Page:5243-5244
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kang Dae-Hwan,Ahn Dong-Ho,Kwon Min-Ho,Kwon Hyuk-Soon,Kim Ki-Bum,Lee Kyeong Seok,Cheong Byung-ki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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