High-performance double delta-doped sheets Ga0.51In0.49P/In0.15Ga0.85As/ Ga0.51In0.49P pseudomorphic heterostructure transistors-Reference-Cited by-同舟云学术

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High-performance double delta-doped sheets Ga0.51In0.49P/In0.15Ga0.85As/ Ga0.51In0.49P pseudomorphic heterostructure transistors

Published:1999-12-09 Issue:1 Volume:15 Page:1-6
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Chang Wen-Lung,Pan Hsi-Jen,Wang Wei-Chou,Thei Kong-Beng,Yu Kuo-Hui,Lin Kun-Wei,Cheng Chin-Chuan,Lour Wen-Shiung,Liu Wen-Chau

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. High-performance and high-yield Ka-band low-noise MMIC using 0.25- mu m ion-implanted MESFET's

2. Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As/GaAs pseudomorphic doped-channel FET with high-current density and high-breakdown voltage

3. Improved breakdown in LP-MOCVD grown n+-GaAs/(P+)-GaInP/n-GaAs heterojunction camel-gate FET

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative study of In0.52Al0.48As/InxGa1−xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel;Semiconductor Science and Technology;2006-04-21

2. Photovoltaic p-i-n Structure of Sb[sub 2]S[sub 3] and CuSbS[sub 2] Absorber Films Obtained via Chemical Bath Deposition;Journal of The Electrochemical Society;2005

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