Improved breakdown in LP-MOCVD grown n+-GaAs/(P+)-GaInP/n-GaAs heterojunction camel-gate FET
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19980682?crawler=true&mimetype=application/pdf
Reference6 articles.
1. High-gain, low offset voltage, and zero potential spike by InGaP/GaAs δ-doped single heterojunction bipolar transistor (δ-SHBT)
2. GaInP/GaAs double heterojunction bipolar transistor with high f/sub T/, f/sub max/, and breakdown voltage
3. High-linearity high-current-drivability ga0.51in0.49p/gaas misfet using ga0.51in0.49p airbridge gate structure grown by gsmb
4. High‐performance camel‐gate field effect transistor using high‐medium‐low doped structure
5. Influence of channel doping-profile on camel-gate field effect transistors
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1. Electronic structure, optical and dielectric constant of compounds Indium-based: InAlP2, and InGaP2 in its chalcopyrite, CuPt and CuAu-I structures;Materials Science in Semiconductor Processing;2013-12
2. InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic doped-channel layer;The European Physical Journal Applied Physics;2009-10-02
3. Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage;Semiconductor Science and Technology;2006-07-10
4. Effect of Temperature on Novel InAlGaP∕GaAs∕InGaAs Camel-Gate Pseudomorphic High-Electron-Mobility Transistors;Journal of The Electrochemical Society;2006
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