Mobility modelling of SOI MOSFETs
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. CMOS scaling into the nanometer regime
2. Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application
3. Electronic structures and phonon-limited electron mobility of double-gate silicon-on-insulator Si inversion layers
4. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition;Nano Letters;2016-05-27
2. Demands of Transport Modeling in Advanced MOSFETs;Computational Microelectronics;2010-09-10
3. A comparative study on analog/RF performance of UTB GOI and SOI devices;Semiconductor Science and Technology;2008-05-08
4. Remote Phonon Scattering in Si and Ge with SiO2and HfO2Insulators: Does the Electron Mobility Determine Short Channel Performance?;Japanese Journal of Applied Physics;2007-05-17
5. Theoretical Electron Mobility Analysis in Thin-Body FETs: Dependence on Substrate Orientation and Biaxial Strain;IEEE Transactions On Nanotechnology;2007-05
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3