A comparative study on analog/RF performance of UTB GOI and SOI devices-Reference-Cited by-同舟云学术

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A comparative study on analog/RF performance of UTB GOI and SOI devices

Published:2008-05-08 Issue:7 Volume:23 Page:075009
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Zhuge Jing,An Xia,Huang Ru,Xiao Han,Hou Xiaoyu,Wang Runsheng,Wang Yangyuan

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Device scaling limits of Si MOSFETs and their application dependencies

2. Mobility modelling of SOI MOSFETs

3. Physical and technological limitations of NanoCMOS devices to the end of the roadmap and beyond

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fully Depleted GeOI-Channel Junctionless pMOSFET with a Low-Resistance-Raised NiGe Alloy S/D;ECS Journal of Solid State Science and Technology;2017

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