Properties of HgTe as a contact layer to n-Hg1-xCdxTe
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/8/i=12/a=011/pdf
Reference15 articles.
1. Hg/sub 0.4/Cd/sub 0.6/Te 1.55- mu m avalanche photodiode noise analysis in the vicinity of resonant impact ionization connected with the spin-orbit split-off band
2. HgCdTe double heterostructure diode lasers grown by molecular-beam epitaxy
3. p‐i‐nHgCdTe photodiodes grown by molecular beam epitaxy
4. The specific contact resistance of Ohmic contacts to HgTe/Hg1−xCdxTe heterostructures
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1. Thermally grown indium (In) thin-film for creating ohmic contact and In-bumps for HgCdTe-based IR detectors;Applied Surface Science;2022-09
2. Understanding the sheet resistance parameter of alloyed ohmic contacts using a transmission line model;Solid-State Electronics;1995-04
3. An analytical model for alloyed ohmic contacts using a trilayer transmission line model;IEEE Transactions on Electron Devices;1995
4. Chemical analysis of and dopant/impurity behaviour in Hg1−xCdxTe and related materials;Progress in Crystal Growth and Characterization of Materials;1994-01
5. Electrical Modelling and Characterisation of Alloyed Ohmic Contacts;MRS Proceedings;1993
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