The specific contact resistance of Ohmic contacts to HgTe/Hg1−xCdxTe heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346733
Reference12 articles.
1. Hg/sub 0.4/Cd/sub 0.6/Te 1.55- mu m avalanche photodiode noise analysis in the vicinity of resonant impact ionization connected with the spin-orbit split-off band
2. The growth of CdHgTe by metalorganic chemical vapour deposition for optical communication devices
3. The electrical properties of metallic contacts on Hg1−xCdxTe
4. On the problem of unsteady viscous MHD flow past an infinite porous flat plate with constant suction
5. Schottky barrier photodiodes inpHg1−xCdxTe
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2. Intrinsic and extrinsic doping;Narrow-gap II–VI Compounds for Optoelectronic and Electromagnetic Applications;1997
3. Ohmic contacts on n‐type CdTe and CdZnTe using coherently grown neodymium;Applied Physics Letters;1996-07-22
4. Properties of metal‐organic chemical‐vapor‐deposition mercury telluride contacts onp‐type cadmium telluride;Journal of Applied Physics;1995-05
5. Properties of HgTe as a contact layer to n-Hg1-xCdxTe;Semiconductor Science and Technology;1993-12-01
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