Strong sensitivity of photoluminescence of InAs/AlAs quantum dots to defects: evidence for lateral inter-dot transport-Reference-Cited by-同舟云学术

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Strong sensitivity of photoluminescence of InAs/AlAs quantum dots to defects: evidence for lateral inter-dot transport

Published:2006-03-07 Issue:4 Volume:21 Page:527-531
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Shamirzaev T S,Gilinsky A M,Kalagin A K,Toropov A I,Gutakovskii A K,Zhuravlev K S

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Competition in the carrier capture between InGaAs/AlGaAs quantum dots and deep point defects

2. Vertically Coupled Quantum Dot Lasers: First Device Oriented Structures with High Internal Quantum Efficiency

3. Hole and electron traps in the InGaAs/GaAs heterostructures with quantum dots

4. Characterization of electron trap states due to InAs quantum dots in GaAs

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures;Nanomaterials;2023-07-23

2. Optical Orientation of Excitons in a Longitudinal Magnetic Field in Indirect-Band-Gap (In,Al)As/AlAs Quantum Dots with Type-I Band Alignment;Nanomaterials;2023-02-14

3. Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates;Nanomaterials;2022-10-12

4. Spin dynamics of charged excitons in ultrathin (In,Al)(Sb,As)/AlAs and Al(Sb,As)/AlAs quantum wells with an indirect band gap;Physical Review B;2022-08-09

5. Optically detected magnetic resonance of indirect excitons in an ensemble of (In,Al,Ga)As/(Al,Ga)As quantum dots;Physical Review B;2021-11-18

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