Characterization of electron trap states due to InAs quantum dots in GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126516
Reference18 articles.
1. Transient capacitance spectroscopy on large quantum well heterostructures
2. Carrier dynamics in quantum wells behaving as giant traps
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4. Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance–voltage profiling and deep-level transient spectroscopy techniques
5. Deep level transient spectroscopy of InP quantum dots
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