Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance–voltage profiling and deep-level transient spectroscopy techniques-Reference-Cited by-同舟云学术

Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance–voltage profiling and deep-level transient spectroscopy techniques

Published:1998-02-15 Issue:4 Volume:83 Page:2093-2097
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lu Liwu,Wang J.,Wang Y.,Ge Weikun,Yang Guowen,Wang Zhanguo

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.366942

Reference12 articles.

1. Parabolic quantum wells with theGaAs−AlxGa1−xAssystem

2. Parabolic quantum wells with theGaAs−AlxGa1−xAssystem

3. Lattice mismatch and band offsets in strained layers

4. Measurement of isotype heterojunction barriers byC‐Vprofiling

5. Transient capacitance spectroscopy on large quantum well heterostructures

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