Novel nonlinear transport phenomena in a triangular quantum well-Reference-Cited by-同舟云学术

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Novel nonlinear transport phenomena in a triangular quantum well

Published:1992-03-01 Issue:3B Volume:7 Page:B530-B532
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Kastalsky A,Peeters F M,Chan W K,Florez L T,Harbison J P

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/7/i=3B/a=138/pdf

Reference10 articles.

1. Electronic Properties of a Semiconductor Superlattice II. Low Temperature Mobility Perpendicular to the Superlattice

2. Dependence of electron mobility in modulation‐doped GaAs‐(AlGa)As heterojunction interfaces on electron density and Al concentration

3. Mechanical stress influence on effective masses in Si inversion layers

4. Study of persistent photoconductivity effect in n-type selectively doped AlGaAs/GaAs heterojunction

5. Conductivity studies for an electron surface layer onHg1−xCdxTe

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ground State of a Polaron in a Symmetric Triangular Quantum Well;Chinese Physics Letters;2006-07-21

2. A theoretical study of resonant tunneling characteristics in triangular double-barrier diodes;Physics Letters A;2006-07

3. Binding energy of donors in symmetric triangular quantum wells;Optoelectronics Letters;2005-09

4. Extended eigenfunctions in asymmetric double triangular quantum wells in weak electric fields;Solid-State Electronics;2002-01

5. Hot magneto-phonon and electro-phonon resonances in heterostructures;Semiconductor Science and Technology;1992-03-01

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