A theoretical study of resonant tunneling characteristics in triangular double-barrier diodes
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference21 articles.
1. Surface-tension-driven nanoelectromechanical relaxation oscillator
2. Resonant tunneling in semiconductor double barriers
3. Modified Airy function method for modeling of direct tunneling current in metal–oxide–semiconductor structures
4. Electron direct tunneling time in heterostructures with nanometer-thick trapezoidal barriers
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