Modified Airy function method for modeling of direct tunneling current in metal–oxide–semiconductor structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1403658
Reference7 articles.
1. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
2. Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices
3. Modeling gate leakage current in nMOS structures due to tunneling through an ultra-thin oxide
4. Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices
5. Self‐consistent solution of the Poisson and Schrödinger equations in accumulated semiconductor‐insulator interfaces
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