Compositional changes in the channel layer of an amorphous In–Ga–Zn-O thin film transistor after thermal annealing-Reference-Cited by-同舟云学术

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Compositional changes in the channel layer of an amorphous In–Ga–Zn-O thin film transistor after thermal annealing

Published:2012-04-23 Issue:6 Volume:27 Page:065002
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Kang Jiyeon,Lee Su Jeong,Kim Chul-Hong,Chae Gee Sung,Jun Myungchul,Hwang Yong Kee,Lee Woong,Myoung Jae-Min

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Role of Ga2O3–In2O3–ZnO channel composition on the electrical performance of thin-film transistors

2. Mechanism of electrical conductivity of transparentInGaZnO4

3. Averaging of the electron effective mass in multicomponent transparent conducting oxides

4. Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment andab initiocalculations

5. The Effect of Deposition Conditions and Annealing on the Performance of High-Mobility GIZO TFTs

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y2O3 with Ozone;ACS Applied Materials & Interfaces;2018-01-05

2. Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films;AIP Advances;2017-07

3. Comparison of composition and atomic structure of amorphous indium gallium zinc oxide thin film transistor before and after positive bias temperature stress by transmission electron microscopy;Semiconductor Science and Technology;2015-04-07

4. High Performance Bottom-Gate-Type Amorphous InGaZnO Flexible Transparent Thin-Film Transistors Deposited on PET Substrates at Low Temperature;Journal of Electronic Materials;2014-01-03

5. Transparent amorphous Indium-Gallium-Zinc-Oxygen thin film transistors using solution technology at low temperature;Journal of Sol-Gel Science and Technology;2013-04-16

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