Study of potential high-kdielectric for UTB SOI MOSFETs using analytical modeling of the gate tunneling leakage-Reference-Cited by-同舟云学术

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Study of potential high-kdielectric for UTB SOI MOSFETs using analytical modeling of the gate tunneling leakage

Published:2011-10-03 Issue:11 Volume:26 Page:115002
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Darbandy Ghader,Lime François,Cerdeira Antonio,Estrada Magali,Garduño Ivan,Iñiguez Benjamin

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures

2. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

3. Analytical modeling of the gate tunneling leakage for the determination of adequate high-k dielectrics in double-gate SOI MOSFETs at the 22nm node

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1. Impact of Process-Induced Inclined Side-Walls on Gate Leakage Current of Nanowire GAA MOSFETs;IEEE Transactions on Electron Devices;2024-03

2. Effect of Positive/Negative Interface Trap Charges on the Performance of Multi Fin FinFET (M-FinFET);Silicon;2022-01-11

3. RF/Analog performance of GaAs Multi-Fin FinFET with stress effect;Microelectronics Journal;2021-11

4. Relationship between Atomic Structure, Composition, and Dielectric Constant in Zr–SiO2 Glasses;ACS Omega;2021-10-21

5. Modelling and analysis of gate leakage current and its wafer level variability in advanced FD-SOI MOSFETs;Solid-State Electronics;2020-01

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