RF/Analog performance of GaAs Multi-Fin FinFET with stress effect
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference37 articles.
1. D. A. Neamen, Semiconductor Phycics and Devices. .
2. Study of potential high-k dielectric for UTB SOI MOSFETs using analytical modeling of the gate tunneling leakage;Darbandy;Semicond. Sci. Technol.,2011
3. Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs;Hu;Microelectron. J.,2016
4. Temperature dependent model for threshold voltage and subthreshold slope of strained-Si channel MOSFETs with a polysilicon gate;Biswas;Microelectron. Reliab.,2014
5. Temperature-dependent short-channel parameters of FinFETs;Das;J. Comput. Electron.,2018
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. RF/Analog Performance Enhancement of TMG SD FinFET;2022 IEEE 19th India Council International Conference (INDICON);2022-11-24
2. Analysis and characterization of layout dependent effect for advance FinFET circuit design;Microelectronics Journal;2022-07
3. Electrical Characterization of highly stable 10nm triple-gate FinFET for different contacts and oxide region materials;Silicon;2022-05-14
4. Impact of channel parameters on threshold voltage at variable temperatures of Double-gate CNTFET;Micro and Nanostructures;2022-04
5. Effect of Positive/Negative Interface Trap Charges on the Performance of Multi Fin FinFET (M-FinFET);Silicon;2022-01-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3