Modulation of 2DEG in AlGaN/GaN heterostructures by P(VDF-TrFE)-Reference-Cited by-同舟云学术

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Modulation of 2DEG in AlGaN/GaN heterostructures by P(VDF-TrFE)

Published:2010-12-17 Issue:2 Volume:26 Page:025010
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Wang Ze-gao,Chen Yuan-fu,Chen Chao,Hao Xin,Liu Xing-zhao,Zhang Wan-li,Li Yan-rong

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors studied by Raman scattering

2. Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor

3. Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies

4. Temperature and compositional dependence of the energy band gap of AlGaN alloys

5. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates;Advanced Electronic Materials;2020-07-12

2. Tailoring two-dimensional electron gas conductivity at oxide heterointerfaces;Current Applied Physics;2017-05

3. Ultraviolet photoresponse of ZnO nanostructured AlGaN/GaN HEMTs;Materials Science in Semiconductor Processing;2016-03

4. AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating;Scientific Reports;2015-09-14

5. Non-Volatile Control of 2DEG Conductivity at Oxide Interfaces;Advanced Materials;2013-06-27

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