Temperature and well number dependence of exciton localization in InGaN/GaN quantum wells
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference27 articles.
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1. Dynamics of double-peak photoluminescence in m-plane InGaN/GaN MQWs;Journal of Luminescence;2023-05
2. Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment;Results in Physics;2021-12
3. Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells;Journal of Alloys and Compounds;2021-09
4. Exciton binding energy in coupled double zinc blende GaN/InGaN quantum well;physica status solidi (b);2016-11-08
5. Plasmonic modification of electron-longitudinal-optical phonon coupling in Ag-nanoparticle embedded InGaN/GaN quantum wells;Applied Physics Letters;2014-09
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