A degradation rate study of MBE-grown high-power AlGaAs laser diodes-Reference-Cited by-同舟云学术

A degradation rate study of MBE-grown high-power AlGaAs laser diodes

Published:1994-04-01 Issue:4 Volume:9 Page:345-348
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Chaly V P,Etinberg M I,Fokin G A,Karpov S Yu,Myachin V,Ostrovsky A Yu,Pogorelsky Yu V,Rusanovich I Yu,Sokolov A,Shcurko A P,Strugov N A,Ter-Martirosyan A L

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/9/i=4/a=002/pdf

Reference8 articles.

1. Variation of background impurities in AlxGa1−xAs (0.3 ≤ χ ≤ 0.4) with growth temperature: implications for device leakage current and surface/heterointerface roughness

2. Threshold Current Density of GaAs/AlGaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy

3. Role of substrate temperature in molecular‐beam epitaxial growth of high‐power GaAs/AlGaAs lasers

4. On the practical applications of MBE surface phase diagrams

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1. AlGaAs/GaAs superlattice photocathode grown by molecular beam epitaxy: correspondence between room temperature photoluminescence and quantum efficiency;Japanese Journal of Applied Physics;2021-01-15

2. High-power low-threshold laser diodes (λ=0.94μm) based on MBE-grown In0.1Ga0.9As/AlGaAs/GaAs heterostructures;Technical Physics Letters;2002-08

3. AlGaAs/GaAs-heterostructure cw laser diodes with a working output optical power of 3 W (λ=0.81 μm) and an operating life of 2000 hours;Technical Physics Letters;1997-04

4. Use of molecular beam epitaxy for high-power AlGaAs laser production;Journal of Crystal Growth;1995-05