Use of molecular beam epitaxy for high-power AlGaAs laser production-Reference-Cited by-同舟云学术

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Use of molecular beam epitaxy for high-power AlGaAs laser production

Published:1995-05 Issue: Volume:150 Page:1350-1353
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chaly V.P.,Demidov D.M.,Fokin G.A.,Karpov S.Yu.,Myachin V.E.,Pogorelsky Yu.V.,Rusanovich I.Yu.,Shkurko A.P.,Ter-Martirosyan A.L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. Degradation and lifetime studies of high‐power single‐quantum‐well AlGaAs ridge lasers

2. High power AlGaAs quantum well laser diodes prepared by molecular beam epitaxy

3. A degradation rate study of MBE-grown high-power AlGaAs laser diodes

4. MBE as a production technology for AlGaAs lasers

5. High power laser diodes

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pyrometer unit for GaAs substrate temperature control in an MBE system;Technical Physics;2004-01

2. Radiation thermometer configured for GaAs molecular beam epitaxy;SPIE Proceedings;2003-06-17

3. 808 nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice;Journal of Crystal Growth;1997-05

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