Optical absorption and determination of band offset in strain-balanced GaInP/InAsP multiple quantum wells grown by low-pressure metalorganic vapour phase epitaxy-Reference-Cited by-同舟云学术

Optical absorption and determination of band offset in strain-balanced GaInP/InAsP multiple quantum wells grown by low-pressure metalorganic vapour phase epitaxy

Published:1997-05-01 Issue:5 Volume:12 Page:550-554
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Ababou Y,Desjardins P,Chennouf A,Masut R A,Yelon A,Beaudoin M,Bensaada A,Leonelli R,L'Espérance G

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Multiple quantum well light modulators for the 1.06 μm range on InP substrates: InxGa1−xAsyP1−y/InP, InAsyP1−y/InP, and coherently strained InAsyP1−y/InxGa1−xP

2. Growth of strain‐balanced InAsP/InGaP superlattices for 1.06 μm optical modulators

3. Self‐induced laterally modulated GaInP/InAsP structure grown by metal‐organic vapor‐phase epitaxy

4. Strain compensated InAsP/InP/InGaP multiple quantum well for 1.5 μm wavelength

5. Optimization of multiple quantum well structures for waveguide electroabsorption modulators

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical properties and heterojunction band alignment in fully coherent strain-compensated InAsxP1−x/GayIn1−yP multilayers on InP(001);Journal of Applied Physics;2000-03

2. Competing strain relaxation mechanisms in organometallic vapor-phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-03