Optical properties and heterojunction band alignment in fully coherent strain-compensated InAsxP1−x/GayIn1−yP multilayers on InP(001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372181
Reference39 articles.
1. Band structure engineering of semiconductor lasers for optical communications
2. Temperature dependent photoluminescent properties of InAsxP1−x/InP strained‐layer quantum wells
3. Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy
4. Quantum confined Stark effect near 1.5 μm wavelength in InAs0.53P0.47/GayIn1−yP strain-balanced quantum wells
5. InAsP/InGaP All-Ternary Strain-Compensated Multiple Quantum Wells and Their Application to Long-Wavelength Lasers
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Charge carrier induced lattice strain and stress effects on As activation in Si;Applied Physics Letters;2008-07-14
2. Coherent vs. incoherent charge transport in semiconductor quantum cascade structures;Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII;2004-06-16
3. Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grown by low pressure metalorganic vapor phase epitaxy;Journal of Applied Physics;2003-05
4. Modeling of carrier dynamics in quantum-well electroabsorption modulators;IEEE Journal of Selected Topics in Quantum Electronics;2002-11
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