Effect of interface and bulk traps on theC–Vcharacterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structure-Reference-Cited by-同舟云学术

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Effect of interface and bulk traps on theC–Vcharacterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structure

Published:2016-04-28 Issue:6 Volume:31 Page:065014
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Bao Qilong,Huang Sen,Wang Xinhua,Wei Ke,Zheng Yingkui,Li Yankui,Yang Chengyue,Jiang Haojie,Li Junfeng,Hu Anqi,Yang Xuelin,Shen Bo,Liu Xinyu,Zhao Chao

Funder

Ministry of Science and Technology of the People’s Republic of China

Opening project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences

National Natural Science Foundation of China

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/31/i=6/a=065014/pdf

Reference32 articles.

1. Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

2. CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

3. 600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

4. Direct Determination of Energy Band Alignments of Ni/Al2O3/GaN MOS Structures Using Internal Photoemission Spectroscopy

5. Atomic Layer Deposition of $\hbox{SiO}_{2}$ for AlGaN/GaN MOS-HFETs

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1. Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique;Nanomaterials;2024-09-10

2. O₂ Plasma Alternately Treated ALD-Al₂O₃ as Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs;IEEE Access;2024

3. Mechanism of Linearity Improvement in GaN HEMTs by Low Pressure Chemical Vapor Deposition-SiN_x Passivation;IEEE Transactions on Electron Devices;2022-12

4. An AlGaN/GaN HEMT with sputter-SiN passivation for the on-state performance improvement;Micro and Nanostructures;2022-08

5. Effect of amorphous ternary AlBN passivations on the performance of AlGaN/GaN HEMTs;AIP Advances;2022-07-01

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