Current–voltage and noise characteristics of reverse-biased Au/n-GaAs Schottky diodes with embedded InAs quantum dots-Reference-Cited by-同舟云学术

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Current–voltage and noise characteristics of reverse-biased Au/n-GaAs Schottky diodes with embedded InAs quantum dots

Published:2007-08-29 Issue:10 Volume:22 Page:1086-1091
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Arpatzanis N,Tassis D H,Dimitriadis C A,Charitidis C,Song J D,Choi W J,Lee J I

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Quantum dot resonant cavity photodiode with operation near 1.3 [micro sign]m wavelength

2. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

3. 1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C

4. Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Rapid thermal annealing temperature dependence of noise properties in Au/n-GaAs Schottky diodes with embedded InAs quantum dots in asymmetric In0.2Ga0.8As wells;physica status solidi (b);2009-04

2. Ideality factor dependence of capacitance and reverse current noise in Au/n-GaAs Schottky diodes with embedded self-assembled InAs quantum dots;physica status solidi (c);2008-12

3. Effect of Rapid Thermal Annealing on the Electrical Properties of GaAs Schottky Diodes Embedded with Self-Assembled InAs Quantum Dots;Journal of Nanoscience and Nanotechnology;2008-10-01

4. Emission dynamics of InAs self-assembled quantum dots with different cap layer structures;Semiconductor Science and Technology;2008-06-03

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