Effects of detrapping on electron traps generated in gate oxides-Reference-Cited by-同舟云学术

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Effects of detrapping on electron traps generated in gate oxides

Published:2003-01-16 Issue:2 Volume:18 Page:174-182
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Zhang W D,Zhang J F,Lalor M J,Burton D R,Groeseneken G,Degraeve R

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Lateral profiling of oxide charge and interface traps near MOSFET junctions

2. Electron trap generation in thermally grown SiO2under Fowler–Nordheim stress

3. Oxide scaling limit for future logic and memory technology

4. Anode hole injection, defect generation, and breakdown in ultrathin silicon dioxide films

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1. Charge Accumulation in MOS Structures with a Polysilicon Gate under Tunnel Injection;Semiconductors;2018-12

2. Dynamic investigation of charging kinetics in sintered yttria stabilized zirconia and α-alumina polycrystalline ceramics under electron beam irradiation;Ceramics International;2016-05

3. Trapping-charging ability and electrical properties study of amorphous insulator by dielectric spectroscopy;Journal of Applied Physics;2014-09-14

4. Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High- $\kappa$ Intergate Dielectrics of Flash Memory Cells;IEEE Transactions on Electron Devices;2014-05

5. Oxide Defects;Bias Temperature Instability for Devices and Circuits;2013-09-10

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