Optical and electrical characterization of annealed silicon-implanted GaN
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
2. Activation studies of low-dose Si implants in gallium nitride
3. Electrical and structural analysis of high-dose Si implantation in GaN
4. Sputtered AlN encapsulant for high‐temperature annealing of GaN
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1. Electrochemical Etching of Nitrogen Ion‐Implanted Gallium Nitride – A Route to 3D Nanoporous Patterning;physica status solidi (b);2024-04-16
2. First order Raman scattering analysis of transition metal ions implanted GaN;Journal of Physics and Chemistry of Solids;2016-03
3. Structural modifications of GaN after cerium implantation;Journal of Raman Spectroscopy;2012-07-12
4. Structural, Optical and Magnetic Properties of Ce–GaN Based Diluted Magnetic Semiconductor;Journal of Superconductivity and Novel Magnetism;2010-10-08
5. Electrical and structural characterization of ion implanted GaN;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-05
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