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Structural modifications of GaN after cerium implantation

  • Published:2012-07-12 Issue:1 Volume:44 Page:136-141
  • ISSN:0377-0486
  • Container-title:Journal of Raman Spectroscopy
  • language:en
  • Short-container-title:J. Raman Spectrosc.

Author:

Majid Abdul1,Zhu Jianjun2,al Hassan Najam3,Shakoor Abdul4

Affiliation:

1. Physics Department; University of Gujrat; Gujrat Pakistan

2. Nano Fabrication Facility; Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences; Suzhou China

3. Physics Department; Hazara University; Mansehra Pakistan

4. Physics Department; Bahauddin Zakariya University; Multan Pakistan

Publisher

Wiley

Subject

Spectroscopy,General Materials Science

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and magnetic properties of Dy-implanted GaN films;Journal of Alloys and Compounds;2017-07

2. Effects of electronic and nuclear stopping power on disorder induced in GaN under swift heavy ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-08

3. First order Raman scattering analysis of transition metal ions implanted GaN;Journal of Physics and Chemistry of Solids;2016-03

4. Resonant Raman scattering study of V, Cr and Co ions implanted into GaN;RSC Advances;2016

5. Recent advances in linear and nonlinear Raman spectroscopy. Part VIII;Journal of Raman Spectroscopy;2014-11
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