Optimized ONO thickness for multi-level and 2-bit/cell operation for wrapped-select-gate (WSG) SONOS memory-Reference-Cited by-同舟云学术

Optimized ONO thickness for multi-level and 2-bit/cell operation for wrapped-select-gate (WSG) SONOS memory

Published:2007-12-06 Issue:1 Volume:23 Page:015004
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Wu Woei-Cherng,Chao Tien-Sheng,Peng Wu-Chin,Yang Wen-Luh,Chen Jian-Hao,Ma Ming Wen,Lai Chao-Sung,Yang Tsung-Yu,Lee Chien-Hsing,Hsieh Tsung-Min,Liou Jhyy Cheng,Chen Tzu Ping,Chen Chien Hung,Lin Chih Hung,Chen Hwi Huang,Ko Joe

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. A low voltage SONOS nonvolatile semiconductor memory technology

2. A true single-transistor oxide-nitride-oxide EEPROM device

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Reliability Dynamic-Threshold Source-Side Injection for 2-Bit/Cell With MLC Operation of Wrapped Select-Gate SONOS in nor-Type Flash Memory;IEEE Transactions on Electron Devices;2010-09

2. Characteristics of SONOS-Type Flash Memory With In Situ Embedded Silicon Nanocrystals;IEEE Transactions on Electron Devices;2010-08

3. Physical Mechanism of High-Programming-Efficiency Dynamic-Threshold Source-Side Injection in Wrapped-Select-Gate SONOS for nor-Type Flash Memory;IEEE Electron Device Letters;2009-11

4. High-Speed Multilevel Wrapped-Select-Gate SONOS Memory Using a Novel Dynamic Threshold Source-Side-Injection (DTSSI) Programming Method;IEEE Electron Device Letters;2009-06