Physical Mechanism of High-Programming-Efficiency Dynamic-Threshold Source-Side Injection in Wrapped-Select-Gate SONOS for nor-Type Flash Memory-Reference-Cited by-同舟云学术

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Physical Mechanism of High-Programming-Efficiency Dynamic-Threshold Source-Side Injection in Wrapped-Select-Gate SONOS for nor-Type Flash Memory

Published:2009-11 Issue:11 Volume:30 Page:1206-1208
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kuan-Ti Wang ,Tien-Sheng Chao ,Tsung-Yu Chiang ,Woei-Cherng Wu ,Po-Yi Kuo ,Yi-Hong Wu ,Yu-Lun Lu ,Chia-Chun Liao ,Wen-Luh Yang ,Chien-Hsing Lee ,Tsung-Min Hsieh ,Jhyy-Cheng Liou ,Shen-De Wang ,Tzu-Ping Chen ,Chien-Hung Chen ,Chih-Hung Lin ,Hwi-Huang Chen

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5291954/05280344.pdf?arnumber=5280344

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Common Source and Word Line Electrodes on Program Operation in SuperFlash Memory;Electronics;2021-02-01

2. Key Technology Practice of High-Speed Access and Research on the Temperature Dependence of Key Time Parameters Based on NAND Flash Memory;IEEE Access;2021

3. Novel 2-Bit/Cell Wrapped-Select-Gate SONOS TFT Memory Using Source-Side Injection for NOR-Type Flash Array;IEEE Electron Device Letters;2012-06

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