Enhanced performance of an AlGaN/GaN high electron mobility transistor on Si by means of improved adatom diffusion length during MOCVD epitaxy-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Enhanced performance of an AlGaN/GaN high electron mobility transistor on Si by means of improved adatom diffusion length during MOCVD epitaxy

Published:2013-06-21 Issue:7 Volume:28 Page:074002
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Shahedipour-Sandvik F,Leathersich J,Tompkins R P,Suvarna P,Tungare M,Walsh T A,Kirchner K W,Zhou S,Jones K A

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/28/i=7/a=074002/pdf

Reference32 articles.

1. AlGaN/GaN high electron mobility transistors with InGaN back-barriers

2. High Power GaN-HEMT for Wireless Base Station Applications

3. AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

4. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

5. 30-W/mm GaN HEMTs by Field Plate Optimization

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical properties of AlGaN/GaN HEMTs in stretchable geometries;Solid-State Electronics;2017-10

2. Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching;Journal of Applied Physics;2016-10-21

3. Frequency-dependent C-V Characteristic-based Extraction of Interface Trap Density in Normally-off Gate-recessed AlGaN/GaN Heterojunction Field-effect Transistors;JSTS:Journal of Semiconductor Technology and Science;2015-10-30

4. Post-annealing effects on pulsed laser deposition-grown GaN thin films;Thin Solid Films;2015-02

5. Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors;Chinese Physics B;2014-09

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3