Frequency-dependent C-V Characteristic-based Extraction of Interface Trap Density in Normally-off Gate-recessed AlGaN/GaN Heterojunction Field-effect Transistors-Reference-Cited by-同舟云学术

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Frequency-dependent C-V Characteristic-based Extraction of Interface Trap Density in Normally-off Gate-recessed AlGaN/GaN Heterojunction Field-effect Transistors

Published:2015-10-30 Issue:5 Volume:15 Page:497-503
ISSN:1598-1657
Container-title:JSTS:Journal of Semiconductor Technology and Science
language:en
Short-container-title:JSTS:Journal of Semiconductor Technology and Science

Author:

Choi Sungju,Kang Youngjin,Kim Jonghwa,Kim Jungmok,Choi Sung-Jin,Kim Dong Myong,Cha Ho-Young,Kim Hyungtak,Kim Dae Hwan

Publisher

The Institute of Electronics Engineers of Korea

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://ocean.kisti.re.kr/downfile/crosscheck/ieek/JAKO201534168452156.pdf

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric;Scientific Reports;2017-01-13

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