Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep40669.pdf
Reference45 articles.
1. Das, S., Chen, H.-Y., Penumatcha, A. V. & Appenzeller, J. High Performance Multilayer MoS2 Transistors with Scandium Contacts. Nano Letters 13, 100–105 (2013).
2. Kim, S. et al. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nat. Commun. 3, 1011 (2012).
3. Wu, W. et al. High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains. Applied Physics Letters 102, 142106 (2013).
4. Zhou, C. et al. Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT. Nanoscale 7, 8695–8700 (2015).
5. Liu, H. & Ye, P. D. Dual-Gate MOSFET With Atomic-Layer-Deposited as Top-Gate Dielectric. IEEE Electron Device Letters 33, 546–548 (2012).
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