Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/9/097305/pdf
Reference20 articles.
1. Enhanced performance of an AlGaN/GaN high electron mobility transistor on Si by means of improved adatom diffusion length during MOCVD epitaxy
2. Trap states in AlGaN channel high-electron-mobility transistors
3. The 1.6-kV AlGaN/GaN HFETs
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1. Design and Analysis of a Field Plate Engineered High Electron Mobility Transistor for Enhanced Performance;Journal of Electronic Materials;2022-04-25
2. Access Region Stack Engineering for Mitigation of Degradation in AlGaN/GaN HEMTs With Field Plate;IEEE Transactions on Device and Materials Reliability;2022-03
3. Effects of multi-layer Ti/Al electrode and ohmic groove etching on ohmic characteristics of AlGaN/GaN HEMT devices;AIP Advances;2021-11-01
4. Impact of oxygen in electrical properties and hot-carrier stress-induced degradation of GaN high electron mobility transistors*;Chinese Physics B;2021-11-01
5. Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2021-10
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