A model for radiation damage effects in carbon-doped crystalline silicon-Reference-Cited by-同舟云学术

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A model for radiation damage effects in carbon-doped crystalline silicon

Published:1987-08-01 Issue:8 Volume:2 Page:524-532
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Davies G,Lightowlers E C,Newman R C,Oates A S

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference49 articles.

1. The effect of carbon and boron on the accumulation of vacancy-oxygen complexes in silicon

2. Kinetics of Accumulation of Radiation Defects and Annihilation of Vacancies and Interstitials in Carbon- and Boron-Containing Silicon

3. Low temperature electron irradiation of silicon containing carbon

4. Subthreshold Radiation Damage in Silicon: Carbon Isotope Measurements on C_s-Si_I-C_s Complexes

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4. Calibration curve for the photoluminescence method after electron irradiation for quantifying low-level carbon in silicon;Japanese Journal of Applied Physics;2021-01-12

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