High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasers-Reference-Cited by-同舟云学术

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High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasers

Published:2000-03-08 Issue:4 Volume:15 Page:390-394
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Yarekha D A,Vicet A,Perona A,Glastre G,Fraisse B,Rouillard Y,Skouri E M,Boissier G,Grech P,Joullié A,Alibert C,Baranov A N

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Ultralow-threshold (50 A/cm2) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05 μm

2. 4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes

3. Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well structures

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1. Metamorphic InGaAs/InAsPSb Quantum Well Light Emitting Diodes for Operation in the Short‐Wave Infrared Region;Advanced Functional Materials;2024-08-28

2. Thornber–Feynman carrier-optical-phonon scattering rates in wurtzite crystals;Journal of Physics: Condensed Matter;2020-10-07

3. ZnO/GaN heterojunction based self-powered photodetectors: Influence of interfacial states on UV sensing;Applied Surface Science;2019-06

4. 6.6.2 Growth of quantum wells in GaSb-based type-II diode lasers;Growth and Structuring;2013

5. 2.1μm Room Temperature Continuous Waves Operation of InGaAsSb-AlGaAsSb Double-Quantum Well Laser;Advanced Materials Research;2011-12

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