Sub-band structure for electrons and holes in inversion and accumulation layers at the InGaAs-InP interface
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference37 articles.
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Magnetoquantum effects in III-V tunneling heterostructures;Physical Review B;1997-07-15
2. Effective-mass anisotropy in GaAs-(Ga,Al)As two-dimensional hole systems: comparison of theory and very high-field cyclotron resonance experiments;Journal of Physics: Condensed Matter;1995-11-27
3. Self-consistent calculations of emitter accumulation layers in biased GaAs-AlxGa1-xAs heterostructures;Semiconductor Science and Technology;1993-09-01
4. Utilization of a piezoelectric field in a one-side-doped quantum well;Surface Science;1992-02
5. Pressure-induced depopulation of the first excited subband in GaInAs/InP heterojunctions;Semiconductor Science and Technology;1989-04-01
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