Self-consistent calculations of emitter accumulation layers in biased GaAs-AlxGa1-xAs heterostructures
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/8/i=9/a=013/pdf
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1. Sub-band structure for electrons and holes in inversion and accumulation layers at the InGaAs-InP interface
2. Inverted bistability in the current-voltage characteristics of a resonant tunneling device
3. Negative Field-Effect Mobility on (100) Si Surfaces
4. Effect of a transverse magnetic field on tunneling in single- and double-barrier structures
5. Calculated Energy Levels and Optical Absorption inn-Type Si Accumulation Layers at Low Temperature
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1. Geometry Effects on the Phonon-Drag Contribution to Thermopower in a Coupled-Quantum-Well System at Low Temperature;Journal of Low Temperature Physics;2015-09-03
2. Mathematical and Numerical Modelling of Heterostructure Semiconductor Devices: From Theory to Programming;2009
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