Interfacial growth at the HfO2/Si interface during annealing in oxygen ambient
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. The electronic structure at the atomic scale of ultrathin gate oxides
2. Low temperature UV/ozone oxidation formation of HfSiON gate dielectric
3. Experimental observations of the thermal stability of high-k gate dielectric materials on silicon
4. Interfacial chemical structure of HfO2∕Si film fabricated by sputtering
5. Two-step behavior of initial oxidation at HfO2∕Si interface
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1. Highly area-selective atomic layer deposition of device-quality Hf1-xZrxO2 thin films through catalytic local activation;Chemical Engineering Journal;2024-05
2. Ferroelectricity-modulated resistive switching in Pt/Si:HfO2/HfO2−x/Pt memory;Journal of Semiconductors;2016-08
3. RETRACTED ARTICLE: Enhancement of the blue photoluminescence intensity for the porous silicon with HfO2 filling into microcavities;Scientific Reports;2015-10-27
4. Ferroelectric-field-effect-enhanced resistance performance of TiN/Si:HfO2/oxygen-deficient HfO2/TiN resistive switching memory cells;Applied Physics Letters;2015-07-06
5. Strong photoluminescence of the porous silicon with HfO2-filled microcavities;Applied Physics Letters;2015-06-22
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