Characterization of biaxial stressed silicon by spectroscopic ellipsometry and synchrotron x-ray scattering
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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3. Strain dependence of the direct energy bandgap in thin silicon on insulator layers;Journal of Physics D: Applied Physics;2010-06-08
4. Optical anisotropies of Si grown on step-graded SiGe(110) layers;Applied Physics Letters;2010-03
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