Characterization of biaxial stressed silicon by spectroscopic ellipsometry and synchrotron x-ray scattering
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference35 articles.
1. Silicon Device Scaling to the Sub-10-nm Regime
2. The Effects of Pressure and Temperature on the Resistance ofp−nJunctions in Germanium
3. A Logic Nanotechnology Featuring Strained-Silicon
4. A 90-nm Logic Technology Featuring Strained-Silicon
5. Strained ultrahigh performance fully depleted nMOSFETs with f/sub t/ of 330 GHz and sub-30-nm gate lengths
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4. Optical anisotropies of Si grown on step-graded SiGe(110) layers;Applied Physics Letters;2010-03
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