Strained ultrahigh performance fully depleted nMOSFETs with f/sub t/ of 330 GHz and sub-30-nm gate lengths-Reference-Cited by-同舟云学术

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Strained ultrahigh performance fully depleted nMOSFETs with f/sub t/ of 330 GHz and sub-30-nm gate lengths

Published:2006-03 Issue:3 Volume:27 Page:191-193
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Singh D.V.,Jenkins K.A.,Sleight J.,Ren Z.,Ieong M.,Haensch W.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/33635/01599476.pdf?arnumber=1599476

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. (Invited) Heterogeneous Integration of InP HBTs on CMOS: Leveraging and Providing Value to Conventional Silicon Technologies;ECS Transactions;2013-03-15

2. Hybrid orientation technology and strain engineering for ultra-high speed MOSFETs;Bulletin of Materials Science;2012-10

3. High-Throughput On-Chip Large Deformation of Silicon Nanoribbons and Nanowires;Journal of Microelectromechanical Systems;2012-08

4. Temperature Dependence of Electron Mobility on Strained nMOSFETs Fabricated by Strain-Gate Engineering;IEEE Electron Device Letters;2012-07

5. Nanoscale FETs;Silicon-Based Millimeter-wave Technology - Measurement, Modeling and Applications;2012

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